Enhancement-mode AlGaN/GaN MOS-HEMT on silicon with ultrathin barrier and diluted KOH passivation

Chang, L.-C.L.-C.ChangTsai, T.-H.T.-H.TsaiJiang, Y.-H.Y.-H.JiangCHAO-HSIN WU2020-06-292020-06-292016https://scholars.lib.ntu.edu.tw/handle/123456789/505928Enhancement-mode AlGaN/GaN MOS-HEMT on silicon with ultrathin barrier and diluted KOH passivationconference paper10.1109/EDSSC.2016.77852982-s2.0-85010408015https://www.scopus.com/inward/record.uri?eid=2-s2.0-85010408015&doi=10.1109%2fEDSSC.2016.7785298&partnerID=40&md5=99ea92ecd887b1ae13ecd91a154f1b63