Hole effective mass of strained Ge <inf>1-x</inf> Sn <inf>x</inf> alloys P-channel quantum-well MOSFETs on (001), (110), and (111) Ge substrates

Lan, H.-S.H.-S.LanCHEE-WEE LIU2020-06-162020-06-162016https://scholars.lib.ntu.edu.tw/handle/123456789/502132Hole effective mass of strained Ge <inf>1-x</inf> Sn <inf>x</inf> alloys P-channel quantum-well MOSFETs on (001), (110), and (111) Ge substratesconference paper10.1149/07508.0571ecst2-s2.0-84991641355https://www.scopus.com/inward/record.uri?eid=2-s2.0-84991641355&doi=10.1149%2f07508.0571ecst&partnerID=40&md5=038a86ed92846c80658060675f72bf8b