Constant bias-temperature and constant charge-temperature agings for silicon oxide films of MOS devices

Hwu, J.-G.J.-G.HwuChuang, J.-B.J.-B.ChuangFu, S.-L.S.-L.FuJENN-GWO HWU2018-09-102018-09-101989http://www.scopus.com/inward/record.url?eid=2-s2.0-0024640611&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/347709Constant bias-temperature and constant charge-temperature agings for silicon oxide films of MOS devicesjournal article10.1007/BF00618902