Improvement of GaN Epitaxial Layer and AlGaN/GaN HEMTs by Patterned Sapphire Substrate Technology

Lee C.-CLee H.-JChan C.-TCHIEH-HSIUNG KUAN2022-04-252022-04-252021https://www.scopus.com/inward/record.uri?eid=2-s2.0-85120469161&partnerID=40&md5=232d75fd0069e85cef2e8682bf19c8bahttps://scholars.lib.ntu.edu.tw/handle/123456789/606988A microstructure was designed to reduce the dislocations in the epitaxial GaN layer and improve electrical characteristics of HEMTs by using the patterned sapphire substrates technology. AlGaN/GaN HEMTs with the maximum drain current density increased from 308 mA/mm to 469 mA/mm were achieved. ? 2021 OSA.Aluminum gallium nitrideDrain currentEpitaxial growthIII-V semiconductorsOptical fiber communicationSapphireSubstratesAlGaN/GaN HEMTsAlGaN/GaN-HEMTDrain current densityElectrical characteristicGaN epitaxial layersGaN layersMaximum drain currentPatterned sapphire substrateSubstrate technologyGallium nitrideImprovement of GaN Epitaxial Layer and AlGaN/GaN HEMTs by Patterned Sapphire Substrate Technologyconference paper2-s2.0-85120469161