Huang, T.-Y.T.-Y.HuangCHI-TE LIANGKim, G.-H.G.-H.KimHuang, C.F.C.F.HuangHuang, C.-P.C.-P.HuangRitchie, D.A.D.A.Ritchie2018-09-102018-09-10201013869477http://www.scopus.com/inward/record.url?eid=2-s2.0-76949092127&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/357179The metallic-like regime characterized by Shubnikov-de Haas (SdH) oscillations is investigated between localization-induced weak insulator and quantum Hall liquid in a gated two-dimensional GaAs electron system containing InAs dots. Multiple SdH crossing points are observed in the longitudinal resistivity before the appearance of the critical point of a plateau transition with increasing perpendicular magnetic field. In conductivities, however, there is no corresponding crossing in the metallic-like regime because of the T-dependent Hall slope under electron-electron interaction, which provides an explicit way to distinguish SdH crossing points from the critical point in our study. © 2009 Elsevier B.V. All rights reserved.Insulator-quantum Hall transition; Metallic; Shubnikov-de HaasCritical points; Crossing point; Electron systems; GaAs; InAs; Localization effect; Longitudinal resistivity; Low magnetic fields; Perpendicular magnetic fields; Quantum hall; Quantum hall liquids; Shubnikov-de Haas; Electron-electron interactions; Equations of state; Magnetic fields; Semiconducting organic compounds; Two dimensional; Electronsjournal article10.1016/j.physe.2009.11.0492-s2.0-76949092127WOS:000276541200125