Yang, Fuh-HsiangFuh-HsiangYangJih-Shang HwangChen, Kuei-HsienKuei-HsienChenYING-JAY YANGLee, Tzung-HanTzung-HanLeeHwa, Luu-GenLuu-GenHwaLI-CHYONG CHEN2018-09-102018-09-102002-0200406090http://scholars.lib.ntu.edu.tw/handle/123456789/299382https://www.scopus.com/inward/record.uri?eid=2-s2.0-0037154912&doi=10.1016%2fS0040-6090%2801%2901754-0&partnerID=40&md5=4fff6d6f081afc517b7cde3551009d2bHighly oriented nanocrystalline indium nitride (InN) films were successfully grown on Si(111) substrate. The growth rate of InN film can be enhanced fourfold by a double-zone metal organic chemical vapor deposition system consisting of a high temperature NH3 pre-cracking zone and a low temperature deposition zone. A maximum growth rate of 6 μm/h was achieved due to the high cracking efficiency of NH3. Meanwhile, the growth temperature of the substrate can be varied from 350 to 600 °C, which provides more flexibility for the film structure. While X-ray diffraction revealed the (0001) texture of the film, the high-resolution transmission electron microscopy study concluded the growth of highly oriented nanocrystalline hexagonal InN, which may lead to potential solar cell and optoelectronic applications. © 2002 Elsevier Science B.V. All rights reserved.Indium nitride; MOCVD; Nanostructures; Raman; TEM[SDGs]SDG7Ammonia; Cracking (chemical); High resolution electron microscopy; Metallorganic chemical vapor deposition; Nanostructured materials; Semiconducting indium compounds; Semiconducting silicon; Solar cells; Substrates; Thermal effects; Transmission electron microscopy; X ray diffraction analysis; Indium nitride (InN) films; Thin filmsjournal article10.1016/S0040-6090(01)01754-02-s2.0-0037154912WOS:000174418600030