Hu, S. F.S. F.HuYeh, R. L.R. L.YehRU-SHI LIU2018-09-102018-09-102004http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000220573800014&KeyUID=WOS:000220573800014http://scholars.lib.ntu.edu.tw/handle/123456789/307356[SDGs]SDG7Electron tunneling; Energy efficiency; Growth (materials); Integrated circuits; Particle size analysis; Semiconductor quantum dots; Silica; Silicon wafers; Transistors; Water; Coulomb blockade effect; Formation mechanism; Single electron transistors (SET); Goldjournal article10.1116/1.16337742-s2.0-1642294681WOS:000220573800014