Okazaki, YutakaYutakaOkazakiSawai, HiromiHiromiSawaiEndo, MasamiMasamiEndoMotoyoshi, RyousukeRyousukeMotoyoshiShimada, DaigoDaigoShimadaKunitake, HitoshiHitoshiKunitakeYamazaki, ShunpeiShunpeiYamazakiHuang, Kou ChangKou ChangHuangYoshida, HiroshiHiroshiYoshidaChen, Min ChengMin ChengChenMING-HAN LIAOChang, Shou ZenShou ZenChang2023-06-072023-06-072022-01-010097966Xhttps://scholars.lib.ntu.edu.tw/handle/123456789/631945In this paper, a small-sized oxide semiconductor field-effect transistor (OSFET) is developed as a driving transistor suited for small high-resolution displays of virtual reality/augmented reality devices. We examine the electrical characteristics of an OSFET with a channel length of 200 nm to note its excellent saturation characteristics, high breakdown voltage, high reliability, and low off-state current. Additionally, we fabricate a 3207-ppi organic light-emitting diode display to examine the performance of the OSFET in an active panel. The experimental results showed a high contrast ratio.AR | Display | High-resolution | OLED | Oxide semiconductor | VRconference paper10.1002/sdtp.154992-s2.0-85135617665https://api.elsevier.com/content/abstract/scopus_id/85135617665