Dai, J.-H.J.-H.DaiLin, Y.-L.Y.-L.LinSI-CHEN LEE2020-06-112020-06-11200710411135https://scholars.lib.ntu.edu.tw/handle/123456789/498843https://www.scopus.com/inward/record.uri?eid=2-s2.0-60449118260&doi=10.1109%2fLPT.2007.903344&partnerID=40&md5=ae0155a1984f0815cfe1d2c8775d2039The ten-period In(Ga)As quantum-ring infrared photodetector (QRIP) prepared by molecular beam epitaxy is investigated. The quantum rings show narrow-sized distributions that are segregated into two groups. The QRIP demonstrates a dual-band operation with response peak shifting from the long wavelength of 9.5 μm at biases less than 0.6 V to the middle wavelength of 6.8 μm at biases larger than 0.8 V. The maximum peak responsivity at 20 K is 422 mA/W at 1.2-V bias. © 2007, IEEE. All rights reserved.Dual band; infrared photodetector; quantum dots (QDs); quantum ring[SDGs]SDG7journal article10.1109/LPT.2007.9033442-s2.0-60449118260