2013-08-012024-05-18https://scholars.lib.ntu.edu.tw/handle/123456789/708731摘要：本計畫的目的在於研究與發展由寬能隙金屬氧化物半導體所構成之主動式電子元件，包括：透明薄膜雙極性電晶體(Bipolar Junction Transistor / BJT)、透明N-型與P-型場效薄膜電晶體(field-effect thin film transistor / FE-TFT)、透明互補金屬氧化物半導體反相器(complimentary metal oxide semiconductor inverter / CMOS inverter)等，並設計、製作出基本的透明電路，以作為無型電路(invisible circuit)的發展基礎。計畫的執行主要建立在前期計畫所開發之各項技術，包括：透明P-型銅鋁氧化物半導體材料、氧化鎂鋅系列半導體材料、透明P-N / P-I-N接面二極體與紫外光感測器等。在這為期三年的計畫中，第一年以開發「透明薄膜雙極性電晶體」為目標，針對其元件結構、電性、光學性質與材料參數的相關性進行分析與最佳化，並將此最佳化製程轉移至透明塑膠基板上，完成可撓性透明雙極性電晶體的製作；第二年則是開發透明「N-型與P-型場效薄膜電晶體」，其中又以透明P-型場效薄膜電晶體為研究重點，主要針對元件結構、電性、光學性質與製程參數間的相關性進行分析與最佳化，並將此最佳化製程轉移至透明塑膠基板上，完成可撓性透明場效薄膜電晶體；第三年則將前兩年以及前期計畫所研製之各項元件進行整合，設計製作「透明互補金屬氧化物半導體反相器」與「基本透明電路」，並將此製程轉移至塑膠基板，完成可撓透明電路。<br> Abstract: The goal of this project is to develop and demonstrate wide-bandgap metal-oxide-semiconductor-based active electronic devices, including transparent bipolar junction transistors, transparent n-type and p-type field-effect thin film transistors, and transparent complimentary-metal-oxide-semiconductor inverters. Then these devices will be monolithically integrated and fundamental transparent electronic circuits will be demonstrated, as the foundation for the development of invisible circuits. To achieve the goal, technologies and materials developed previously, such as: transparent p-type copper aluminum oxide (Cu-Al-O) semiconductors, transparent zinc magnesium oxide (Mg-Zn-O) semiconductors, and transparent p-n / p-i-n heterojunction diodes and ultraviolet sensors, will be utilized. The first-year target of this three-year research project is to develop transparent bipolar junction transistor technology. The electrical performance of these devices will be correlated with the structural, optical, electronic properties of the device layers. Then the optimized process will be moved onto plastic substrates to realize flexible transparent bipolar junction transistors. The second-year target is to develop both n-type and p-type transparent field-effect thin film transistor technology. In particular p-type transistor will be emphasized. Again the electrical performance of these devices will be correlated with the structural, optical, electronic properties of the device layers. Then the optimized process will be moved onto plastic substrates to realize flexible transparent field-effect thin film transistors. The target of the last year is to integrate the technologies developed previously to demonstrate transparent complimentary-metal-oxide-semiconductor inverters and fundamental transparent electronic circuits, such as ring oscillators. Once the on-glass circuits are optimized, the entire process will be moved onto plastic substrates to realize flexible transparent complimentary-metal-oxide-semiconductor circuits. At last, the performance of these circuits under mechanical deformation will be evaluated and studied.透明薄膜雙極性電晶體透明場效薄膜電晶體透明互補金屬氧化物半導體反相器透明電路transparent bipolar junction transistorstransparent field-effect thin film transistorstransparent complimentary-metal-oxide-semiconductor inverterstransparent bipolar junction transistorstransparent field-effect thin film transistor