Dc and rf characteristics of self-aligned inversion-channel In <inf>0.53</inf> Ga<inf>0.47</inf> As metal-oxide-semiconductor field-effect transistors using molecular beam epitaxy-Al<inf>2</inf> O<inf>3</inf> / Ga <inf>2</inf> O<inf>3</inf> (Gd<inf>2</inf> O<inf>3</inf>) as gate dielectrics

Lin, T.D.T.D.LinChang, P.P.ChangChiu, H.C.H.C.ChiuMINGHWEI HONGKwo, J.J.KwoLin, Y.S.Y.S.LinHsu, S.S.H.S.S.H.Hsu2019-12-272019-12-272010https://scholars.lib.ntu.edu.tw/handle/123456789/443388Dc and rf characteristics of self-aligned inversion-channel In <inf>0.53</inf> Ga<inf>0.47</inf> As metal-oxide-semiconductor field-effect transistors using molecular beam epitaxy-Al<inf>2</inf> O<inf>3</inf> / Ga <inf>2</inf> O<inf>3</inf> (Gd<inf>2</inf> O<inf>3</inf>) as gate dielectricsconference paper10.1116/1.32764422-s2.0-77952962191https://www.scopus.com/inward/record.uri?eid=2-s2.0-77952962191&doi=10.1116%2f1.3276442&partnerID=40&md5=65fc7e8f6e2468e55fca7c03447d7166