吳乃立2006-07-252018-06-282006-07-252018-06-282002http://ntur.lib.ntu.edu.tw//handle/246246/9296第一年本研究是利用溶膠—凝膠法製備摻雜銻之 二氧化錫溶膠，並且利用水熱法處理（Hydrothermal Process ）進而獲得具有高結晶度的溶膠，以此一溶 膠製備電化學電容電極。再不加入任何黏著劑 （binder ）的條件下探討在不同條件對於電極性質 之影響。之後，再利用此一電極為基材進行處理以 改變其電化學特性。摻雜銻之二氧化錫電極具有半 導體電極的性質同時其電極呈現典型的電雙層電 容器之特性，其電容量受到表面電荷、結晶度、比 表面積與孔洞微結構之影響。二氧化錫電極之電化 學表現深受粉體結晶性的影響，因此我們發現以 500 ℃進行熱處理，為最適之熱處理溫度。同時在 真空的條件下以500 ℃進行熱處理其比電容為大 氣熱處理時之兩倍，呈現典型半導體電容之特性。 我們以500 ℃熱處理具有良好結晶性之電極為基 材利用熱解法及循環伏安法在電極上形成RuO2 ， 使其由傳統的EDL 電容變為具有氧化還原能力的偽電容（pseudocapacitance ）In the first year, we prepared highly crystallized antimony doped Tin oxide (ATO) sol, by using sol-gel process followed by hydrothermal process. The highly crystallized sol was used to prepare electrochemical capacitor electrode without adding any binder, which insist to characterize the properties of these electrodes in different conditions, and we have also used the ATO thin film electrodes as current-collector to increase the capacitance in various methods.The performance of ATO thin film electrodes exhibited not only typical double-layer capacitance, but also semiconducting nature. It was found that the performance of capacitance was strongly affected by space charge, crystallization, specific surface area and the pore microstructure. It was also found the optimum heat-treated temperature was 500 o C,and at this temperature, the oxide thin film was fully crystallized. The capacitance in vacuum at the optimum heat-treat temperature was observed double to the capacitance in air at the same temperature. We finally used the fully crystallized ATO thin film electrode as current-collector, and formed RuO2 on the electrodes via two methods: 1.Thermal pyrolysis 2.Cyclic voltammetry. It’s behavior changed from typical EDLC to pseudocapacitance.application/pdf474684 bytesapplication/pdfzh-TW國立臺灣大學化學工程學系暨研究所超高電容氧化錫氧化釕薄膜電極Supercapacitortin oxide ruthenium oxidethin-film electrodereporthttp://ntur.lib.ntu.edu.tw/bitstream/246246/9296/1/902214E002009.pdf