Indication of lateral nonuniformity of effective oxide charges in hIGH-k gate dielectrics by TeRMAN's method

JENN-GWO HWU2018-09-102018-09-102005http://www.scopus.com/inward/record.url?eid=2-s2.0-33845266461&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/314474Indication of lateral nonuniformity of effective oxide charges in hIGH-k gate dielectrics by TeRMAN's methodconference paper10.1149/1.2209324