Fully integrated concurrent dual-band low noise amplifier with suspended inductors in SiGe 0.35m BiCMOS technology

Lin, Y.-T.Y.-T.LinWang, T.T.WangSHEY-SHI LU2018-09-102018-09-102008http://www.scopus.com/inward/record.url?eid=2-s2.0-42449160131&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/341076[SDGs]SDG7Fully integrated concurrent dual-band low noise amplifier with suspended inductors in SiGe 0.35m BiCMOS technologyjournal article10.1049/el:20080575