Lu B.-ZWang YHuang Z.-JLin K.-YHUEI WANGKUN-YOU LIN2021-09-022021-09-022021https://www.scopus.com/inward/record.uri?eid=2-s2.0-85100939446&doi=10.1109%2fEuMIC48047.2021.00049&partnerID=40&md5=ef26695b0df634ed4e1fc793bd431c8dhttps://scholars.lib.ntu.edu.tw/handle/123456789/580872A 28-GHz Class-F power amplifier fabricated in 90-nm CMOS process for 5G communications is presented in this paper. This PA is a differential pair topology consisted of two common-source cells. The harmonic-tuned network is constructed to enhance the efficiency. The proposed Class-F PA achieves a 12-dB small-signal gain with 7.4-GHz 3-dB bandwidth (25.1-32.5 GHz), saturated output power (Psat) of 14.9 dBm with 43.8 % peak PAE, and output 1-dB compression point (OP1dB) of 14.0 dBm with 42.0 % PAE1dBat 28 GHz. With the modulation measured results using the single-carrier 64-QAM signal, this PA achieves 2.1/4.2 Gb/s data rate, 10.6-dBm/8.1-dBm average output power, and 29.5%/22.6% average PAE, while maintaining root-mean-square (rms) error vector magnitude (EVM) better than-25 dB. Among all the published mm-Wave CMOS PAs, this PA shows outstanding large-signal performances and exceptional modulation capability. ? 2021 EuMA.Bandwidth compression; CMOS integrated circuits; Efficiency; Microwave integrated circuits; Millimeter waves; Modulation; Power amplifiers; 1dB compression point; Average output power; Class F power amplifier; Differential pairs; Large-signal performance; Modulation capability; Root-mean-square errors; Saturated output power (Psat); 5G mobile communication systemsconference paper10.1109/EuMIC48047.2021.000492-s2.0-85100939446