劉致為臺灣大學：電子工程學研究所余名薪Yu, Ming-HsinMing-HsinYu2007-11-272018-07-102007-11-272018-07-102005http://ntur.lib.ntu.edu.tw//handle/246246/57570本論文中，我們將介紹機械/封裝式應力技術與光通訊系統的基本概念，而主要的重點則為光通訊系統接收端前端之光感測元件與類比電路之建構與效能之提升。在第三與第四章中，我們分別設計了一個具有金氧半穿遂二極體結構之光偵測器與一個使用N型場效電晶體形式之主動電感的轉阻放大器，經由拉伸式的應力，光偵測器之光電響應及轉阻放大器之頻寬皆可以達到一定程度的提升。在第五章中，我們則設計了一個以高速應用為考量的轉阻放大器。最後，在第六章中，我們將討論及模擬一個由矽鍺異質接面雙載子電晶體所建構之BiCMOS式新型主動電感。In this thesis, the basic concepts of mechanical/package strain technique and optical communication system are described. Then the focus will be on the construction and performance enhancement of the photo sensing device and analog circuit in the optical communication system receiver front-end. In chapter 3 and chapter 4, a photodetector with NMOS diode structure and a transimpedance amplifier (TIA) adopting NMOSFET active inductor are designed, and through tensile strain, their responsivity and bandwidth can be enhanced respectively. Chapter 5 introduces another transimpedance amplifier designed for high speed applications. Finally, in chapter 6, a novel SiGe HBT BiCMOS type active inductor is discussed and simulated.List of Figures VI List of Tables XI Chapter 1 Introduction 1.1 Motivation 1 1.2 Thesis Outline 1 Chapter 2 Mechanical/Package Strain Technique and Optical Communication System 2.1 Mechanical/Package Strain Technique 3 2.1.1 Introduction 3 2.1.2 Strain Effects on Energy Band and Carrier Mobility 4 2.1.3 Mechanical Setup 7 2.2 Optical communication systems 11 2.2.1 Introduction 11 2.2.2 Overview of the System 11 Chapter 3 A Strain-enhanced Metal/Oxide/Silicon Tunneling Diode Photodetector 3.1 Introduction 14 3.2 MOS Tunneling Diode Photodetector 15 3.3 Responsivity Enhancement by Mechanical Strain 18 Chapter 4 A Strain-enhanced Transimpedance Amplifier 4.1 Introduction 24 4.2 Circuit Architecture 24 4.3 Circuit Design 26 4.3.1 Parasitic Isolation 26 4.3.2 Core Amplifier 27 4.3.3 Output Buffer 30 4.4 Simulation Result and Layout 31 4.5 Speed Enhancement by Mechanical Strain 35 4.6 Measurement 37 4.6.1 Frequency Response 37 4.6.2 Summary 40 Chapter 5 A 7Gb/s Transimpedance Amplifier 5.1 Introduction 41 5.2 Circuit Architecture 41 5.3 Circuit Design 45 5.3.1 Parasitic Isolation 45 5.3.2 Core Amplifier 45 5.3.3 Differential Output Buffer 46 5.4 Simulation Result and Layout 48 5.5 Measurement 52 5.5.1 Frequency Response 52 5.5.2 Eye Diagram 54 5.5.3 Summary 56 Chapter 6 BiCMOS Active Inductor 6.1 Introduction 57 6.2 Basic Concepts of Active Inductor 58 6.2.1 Gyrator-C Topology 58 6.2.2 Basic Configuration of Active Inductor 59 6.3 NFET CMOS Active Inductor 61 6.3.1 Frequency Response 61 6.3.2 Quality-factor Enhancement Techniques 64 6.4 NFET-SiGeHBT BiCMOS Active Inductor 67 6.4.1 SiGe Hetero-junction Bipolar Transistor 67 6.4.2 BiCMOS active inductor 68 Chapter 7 Summary and Future Work 7.1 Summary 74 7.2 Future Work 75 References 762383688 bytesapplication/pdfen-US應變矽光通訊光偵測器轉阻放大器主動電感Strained-SiOptical CommunicationPhoto DetectorTIAActive Inductorthesishttp://ntur.lib.ntu.edu.tw/bitstream/246246/57570/1/ntu-94-R92943047-1.pdf