Liu, J.-J.J.-J.LiuHo, W.-J.W.-J.HoSyu, J.-K.J.-K.SyuLee, Y.-Y.Y.-Y.LeeLin, C.-F.C.-F.LinShiao, H.-P.H.-P.ShiaoCHING-FUH LIN2018-09-102018-09-102014http://www.scopus.com/inward/record.url?eid=2-s2.0-84899013557&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/387117In this study, the enhanced performance of a triple-junction GaAs-based solar cell using a SiO2-nanopillar/SiO2/TiO2 graded-index antireflection coating (GI-ARC) was demonstrated. The optical reflectance, photovoltaic current-voltage (I-V), and external quantum efficiency (EQE) of a cell with a SiO2/TiO2 double-layer (DL) ARC and a cell with a GI-ARC were measured and compared. The cell with a GI-ARC exhibited the lowest optical reflectance. Thus, the average EQE enhancements (?EQE) of the cell with a GI-ARC compared to the cell with a DL-ARC were 5.88% for the top cell and -1.56% for the middle cell. In addition, a small difference in the photocurrent generated between the top cell and the middle cell was achieved. Finally, an additional 0.52% increase (from 24.99% to 25.51%) in conversion efficiency was obtained. Copyright © 2014 Inderscience Enterprises Ltd.Current matching; External quantum efficiency; Graded-index antireflection coating; Triple-junction solar cell[SDGs]SDG7Antireflection coatings; Efficiency; Gallium arsenide; III-V semiconductors; Nanopillars; Reflection; Semiconducting gallium; Silica; Solar cells; Current matching; Double layers; External quantum efficiency; Graded index; Optical reflectance; Photovoltaic currents; Triple junction; Triple junction solar cells; Quantum efficiencyjournal article10.1504/IJNT.2014.059832