High Throughput UHV/CVD SiGe and SiGe:C Process for sige HBT and strained Si FET

Chen, P.S.P.S.ChenTseng, Y.T.Y.T.TsengTsai, M.-J.M.-J.TsaiCHEE-WEE LIU2020-06-162020-06-162002https://scholars.lib.ntu.edu.tw/handle/123456789/502126High Throughput UHV/CVD SiGe and SiGe:C Process for sige HBT and strained Si FETconference paper10.1109/SMTW.2002.11973952-s2.0-84958183678https://www.scopus.com/inward/record.uri?eid=2-s2.0-84958183678&doi=10.1109%2fSMTW.2002.1197395&partnerID=40&md5=aa1be96f8ca767e34a34a6b9adb1d23a