Chen, P.S.P.S.ChenTseng, Y.T.Y.T.TsengTsai, M.-J.M.-J.TsaiCHEE-WEE LIU2020-06-162020-06-162002https://scholars.lib.ntu.edu.tw/handle/123456789/502126A high throughput SiGe UHV/CVD system is demonstrated. Due to the excellent uniformity of thickness and Ge concentration in within a wafer, wafer to wafer, and run-to-run, this system is suitable for manufacture with the throughput of 14 200-mm wafers per hour for the typical HBT structure. The UHV/CVD can fabricate low temperature Si, strained Si/sub 1-x/Ge/sub x/, strained Si/sub 1-x/Ge/sub x/ :C, Si/sub 1-y/C/sub y/, and relaxed SiGe buffers. Various devices with good performance are fabricated by the UHV/CVD system, including HBTs, heterojunction phototransistor, strained Si MOSFET, photodetectors, quantum dot photodetectors with 6-9 /spl mu/m responsivity, and strained SiGe MOSFET.[SDGs]SDG7conference paper10.1109/SMTW.2002.11973952-s2.0-84958183678https://www.scopus.com/inward/record.uri?eid=2-s2.0-84958183678&doi=10.1109%2fSMTW.2002.1197395&partnerID=40&md5=aa1be96f8ca767e34a34a6b9adb1d23a