Efficiency droop behaviors of InGaN/GaN multiple-quantum-well light-emitting diodes with varying quantum well thickness

Li, Y.-L.Y.-L.LiHuang, Y.-R.Y.-R.HuangLai, Y.-H.Y.-H.Lai2009-03-112018-07-062009-03-112018-07-062007http://ntur.lib.ntu.edu.tw//handle/246246/144155application/pdf610970 bytesapplication/pdfen-USEfficiency droop behaviors of InGaN/GaN multiple-quantum-well light-emitting diodes with varying quantum well thicknessjournal articlehttp://ntur.lib.ntu.edu.tw/bitstream/246246/144155/1/02.pdf