In0.53Ga0.47As and in0.52Al0.48As on Inp Grown by Molecular Beam Epitax

Chen, M. K.M. K.Chen李嗣涔林浩雄Lee, Si-ChenSi-ChenLeeLin, Hao-HsiungHao-HsiungLin2009-02-042018-07-062009-02-042018-07-061991http://ntur.lib.ntu.edu.tw//handle/246246/121417en-USIn0.53Ga0.47As and in0.52Al0.48As on Inp Grown by Molecular Beam Epitaxconference paper