Implant isolation of silicon two-dimensional electron gases at 4.2 K

Huang, C.-T.C.-T.HuangLi, J.-Y.J.-Y.LiSturm, J.C.J.C.SturmJIUN-YUN LI2018-09-102018-09-102013http://www.scopus.com/inward/record.url?eid=2-s2.0-84871772433&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/380237[SDGs]SDG7Implant isolation of silicon two-dimensional electron gases at 4.2 Kjournal article10.1109/LED.2012.2228160