Lin G.-W.Jiang Y.-H.Kao P.-K.Chiu I.-C.Wu Y.-H.Hsu C.-C.I-CHUN CHENGJIAN-ZHANG CHEN2019-09-262019-09-26201502724324https://scholars.lib.ntu.edu.tw/handle/123456789/425314SnOx thin films that were rf-sputter-deposited under various gas flow ratios ([O2]/([O2]?+?[Ar]) OFR?=?3.0, 3.6, 4.2 and 4.8?%) were rapidly annealed using atmospheric pressure plasma jets (APPJs) in temperature range of ~350¡V386?¢XC for up to 5?min. The original electron probe micro-analysis [O] contents in the as-deposited films were ~25, ~30, ~35 and ~40?% for films deposited at ([O2]/([O2]?+?[Ar]) gas flow ratios OFR?=?3.0, 3.6, 4.2 and 4.8?%, respectively. APPJ annealing increased the [O] content to ~35?% for films deposited at OFR?=?3.0 and 3.6?%, where the [O] content remained in similar levels for films deposited at OFR?=?4.2 and 4.8?%. Crystalline metallic Sn was identified in films as-deposited at OFR?=?3.0 and 3.6?%; on the other hand, an X-ray amorphous SnOx phase was identified in films as-deposited at OFR?=?4.2 and 4.8?%. Crystallization and oxidation by APPJ annealing improved the transmittance and blue-shifted the absorption band edge to ~420?nm. All APPJ-annealed films exhibit n-type conductivity that may be contributed by the mixed phases of SnO, SnO2 and a small amount of Sn. ? 2015, Springer Science+Business Media New York.Atmospheric pressure plasma jetOxidationSnSnOSnO2SnOxjournal article10.1007/s11090-015-9646-52-s2.0-84944354928WOS:000362966500003https://www2.scopus.com/inward/record.uri?eid=2-s2.0-84944354928&doi=10.1007%2fs11090-015-9646-5&partnerID=40&md5=96a136da67aebf69e37dd4cc316eafc8