STI Mechanical Stress Induced Subthreshold Kink Effect of 40nm PD SOI NMOS Devices

I. LinV. SuJ. B. kuoM. MaC. T. TsaiC. S. YehD. ChenJAMES-B KUO2018-09-102018-09-102007-12http://scholars.lib.ntu.edu.tw/handle/123456789/333623STI Mechanical Stress Induced Subthreshold Kink Effect of 40nm PD SOI NMOS Devicesconference paper10.1109/isdrs.2007.44223252-s2.0-44949181964