Halo profile engineering to reduce Vt fluctuation in high-K/metal-gate nMOSFET

CHEE-WEE LIUChen, W.-Y.W.-Y.ChenYu, T.-H.T.-H.YuOhtou, T.T.OhtouSheu, Y.-M.Y.-M.SheuWu, J.J.WuCHEE-WEE LIU2018-09-102018-09-102010http://www.scopus.com/inward/record.url?eid=2-s2.0-78649534792&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/358251Halo profile engineering to reduce Vt fluctuation in high-K/metal-gate nMOSFETconference paper10.1109/SISPAD.2010.5604546