The characteristic behavior of TMAH water solution for anisotropic etching on both silicon substrate and SiO2 layer

Chen, PHPHChenPeng, HYHYPengHsieh, CMCMHsiehChyu, MKMKChyu2011-02-112018-06-282011-02-112018-06-282001-09http://ntur.lib.ntu.edu.tw//handle/246246/222601en-USThe characteristic behavior of TMAH water solution for anisotropic etching on both silicon substrate and SiO2 layerjournal article