Passivation of GaSb using molecular beam epitaxy Y <inf>2</inf> O <inf>3</inf> to achieve low interfacial trap density and high-performance self-aligned inversion-channel p-metal-oxide-semiconductor field-effect-transistors

Chu, R.L.R.L.ChuChiang, T.H.T.H.ChiangHsueh, W.J.W.J.HsuehChen, K.H.K.H.ChenLin, K.Y.K.Y.LinBrown, G.J.G.J.BrownChyi, J.I.J.I.ChyiKwo, J.J.KwoMINGHWEI HONG2019-12-272019-12-272014https://scholars.lib.ntu.edu.tw/handle/123456789/443326[SDGs]SDG7Passivation of GaSb using molecular beam epitaxy Y <inf>2</inf> O <inf>3</inf> to achieve low interfacial trap density and high-performance self-aligned inversion-channel p-metal-oxide-semiconductor field-effect-transistorsjournal article10.1063/1.49011002-s2.0-84908674296https://www.scopus.com/inward/record.uri?eid=2-s2.0-84908674296&doi=10.1063%2f1.4901100&partnerID=40&md5=d890fff9c5742b0735d3331b6d48adfe