CHING-FUH LINSu, Ting-WienTing-WienSuChung, Peng-FeiPeng-FeiChungLiang, Eih-ZheEih-ZheLiangMIIN-JANG CHENCHEE-WEE LIU2009-03-182018-07-062009-03-182018-07-06200302540584http://ntur.lib.ntu.edu.tw//handle/246246/145937https://www.scopus.com/inward/record.uri?eid=2-s2.0-0037437419&doi=10.1016%2fS0254-0584%2802%2900099-8&partnerID=40&md5=25404bb59d34da5cd53bc9caf7bf86f9Significant enhancement of electroluminescence (EL) at Si bandgap energy is discovered from metal-oxide-semiconductor tunneling diode on p-type Si with oxide grown by liquid-phase deposition (LPD). The LPD grown oxide has nano-structures with the grain size of 10-20nm. The nano-structure of oxide causes the simultaneous localization of electrons and holes at the Si/SiO2 interface, similar to the formation of excitons. This makes the process of the phonon-assisted radiative recombination of electron-hole pair more like two-particle collision than three-particle collision, so increasing the probability of radiative recombination. The measured EL efficiency could be more than 1×10-6. © 2002 Elsevier Science B.V. All rights reserved.application/pdf106744 bytesapplication/pdfen-USElectroluminescence; Liquid-phase deposition; Metal-oxide-semiconductor tunneling diode; Radiative recombinationDeposition; Electroluminescence; Electrons; Energy gap; Excitons; Grain size and shape; Interfaces (materials); Nanostructured materials; Phonons; Metal oxide silicon tunneling diodes; Tunnel diodesjournal article10.1016/S0254-0584(02)00099-82-s2.0-0037437419http://ntur.lib.ntu.edu.tw/bitstream/246246/145937/1/46.pdf