Hsiang K.-YLiao C.-YWang J.-FLou Z.-FLin C.-YChiang S.-HLiu C.-WHou T.-HLee M.-H.CHEE-WEE LIU2022-04-252022-04-25202120794991https://www.scopus.com/inward/record.uri?eid=2-s2.0-85116730501&doi=10.3390%2fnano11102685&partnerID=40&md5=caf3a515842ca2222300b791bd4431d1https://scholars.lib.ntu.edu.tw/handle/123456789/606966Ferroelectric (FE) Hf1?xZrxO2 is a potential candidate for emerging memory in artificial intelligence (AI) and neuromorphic computation due to its non-volatility for data storage with natural bi-stable characteristics. This study experimentally characterizes and demonstrates the FE and antiferroelectric (AFE) material properties, which are modulated from doped Zr incorporated in the HfO2-system, with a diode-junction current for memory operations. Unipolar operations on one of the two hysteretic polarization branch loops of the mixed FE and AFE material give a low program voltage of 3 V with an ON/OFF ratio >100. This also benefits the switching endurance, which reaches >109 cycles. A model based on the polarization switching and tunneling mechanisms is revealed in the (A)FE diode to explain the bipolar and unipolar sweeps. In addition, the proposed FE-AFE diode with Hf1?xZrxO2 has a superior cycling endurance and lower stimulation voltage compared to perovskite FE-diodes due to its scaling capability for resistive FE memory devices. ? 2021 by the authors. Licensee MDPI, Basel, Switzerland.AntiferroelectricFerroelectricHfZrO2journal article10.3390/nano111026852-s2.0-85116730501