Tsai, HsinhanHsinhanTsaiGhosh, DibyajyotiDibyajyotiGhoshPanaccione, WyattWyattPanaccioneSu, Li YunLi YunSuHou, Cheng HungCheng HungHouLEE-YIH WANGCao, Lei RaymondLei RaymondCaoTretiak, SergeiSergeiTretiakNie, WanyiWanyiNie2023-06-092023-06-092022-11-112380-8195https://scholars.lib.ntu.edu.tw/handle/123456789/632005Perovskite-based solid-state radiation detectors have delivered impressive performances, but the electrical field induced instability has been a major detriment for the further development. Here, we identify the voltage-induced instability is directly tied to the humidity levels. A higher humidity elicits a hysteresis in the current-voltage curve and lowers the breakdown voltage. We further add a fluorinated phenylethylamine iodide (5F-PEAI) barrier layer on the perovskite, which protects the device against voltage damage. Photoluminescence maps identify the ion migration and degradation can be suppressed by 5F-PEAI. Quantum chemical simulations corroborate experimental results by revealing high energy barrier for water penetrating the 5F-PEAI layer with enhancing stability of halide perovskite under humid condition. Using a treated device, we demonstrate high X-ray sensitivities approaching 1000 μC/(Gyair·cm2) under high biases. Our work provides a mechanistic understanding on the voltage instability of 2D perovskite detectors and provides a viable solution toward robust detector development.HALIDE PEROVSKITES; EFFICIENCY; POTASSIUMAddressing the Voltage Induced Instability Problem of Perovskite Semiconductor Detectorsjournal article10.1021/acsenergylett.2c020542-s2.0-85140308827WOS:000875654500001https://api.elsevier.com/content/abstract/scopus_id/85140308827