III-V compound semiconductor MOSFETs using Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as gate dielectric

Ren, FFRenMINGHWEI HONGKuo, JMJMKuoHobson, WSWSHobsonLothian, JRJRLothianTsai, HSHSTsaiLin, JJLinMannaerts, JPJPMannaertsKwo, JJKwoChu, SNGSNGChuothers2018-09-102018-09-101997http://scholars.lib.ntu.edu.tw/handle/123456789/331400III-V compound semiconductor MOSFETs using Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as gate dielectricconference paper