High-breakdown-voltage Ga0.51In0.49P/GaAs I-HEMT and I2HEMT with a GaInP passivation layer grown by gas source molecular beam epitaxy

Sun, T.P.T.P.SunHuang, C.L.C.L.HuangLu, S.S.S.S.Lu2018-09-102018-09-101995http://www.scopus.com/inward/record.url?eid=2-s2.0-0029234881&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/316533[SDGs]SDG7High-breakdown-voltage Ga0.51In0.49P/GaAs I-HEMT and I2HEMT with a GaInP passivation layer grown by gas source molecular beam epitaxyjournal article10.1016/0038-1101(94)E0070-U