First Demonstration of Monolithic 3-Tier Nanosheet Transistor Stacking with Split Gate Featuring Tri-State Inverter/Half Sram Functionalities

Huang, Bo-WeiBo-WeiHuangLiu, Ying-QiYing-QiLiuYao, Ching-WangChing-WangYaoChen, Wei-JenWei-JenChenLin, Min-KuanMin-KuanLinLin, Xin-YuanXin-YuanLinCheng, Chun-YiChun-YiChengHuang, YiYiHuangLin, Ding-WeiDing-WeiLinLu, Chih-HsuanChih-HsuanLuTsai, Tsung-HanTsung-HanTsaiCHEE-WEE LIU2025-10-272025-10-272025-06-08https://scholars.lib.ntu.edu.tw/handle/123456789/732966[SDGs]SDG7First Demonstration of Monolithic 3-Tier Nanosheet Transistor Stacking with Split Gate Featuring Tri-State Inverter/Half Sram Functionalitiesconference paper10.23919/vlsitechnologyandcir65189.2025.11074914