CHI-TE LIANGYANG-FANG CHEN2018-09-102018-09-10200600214922http://www.scopus.com/inward/record.url?eid=2-s2.0-33645694377&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/321163AlGaN/GaN heterostructures with different buffer layers were grown on Si substrates by metal-organic vapor phase epitaxy (MOVPE). The electrical property of the two-dimensional electron gas (2DEG) formed at the AlGaN/GaN interface was correlated with both the optical and structural quality of the GaN layer involved. A combination of two sets of high-temperature and low-temperature AlN and an ultrashort exposure to SiH4 showed the best-grown GaN, followed by a similar buffer layer without the SiH4 exposure, and a graded AlGaN buffer layer only. The enhancements in both electron mobility and 2DEG density were also accompanied by a reduced donor-acceptor pair (DAP) emission and a reduced dislocation density in the top GaN grown. © 2006 The Japan Society of Applied Physics.2DEG; AlGaN/GaN; Buffer layer; Defects; MOVPE; Si substrateDislocations (crystals); Electron mobility; Gallium nitride; Heterojunctions; Metallorganic vapor phase epitaxy; Optical properties; 2DEG; AlGaN/GaN; Buffer layers; Si substrate; Semiconducting aluminum compoundsjournal article10.1143/JJAP.45.25162-s2.0-33645694377WOS:000237098800025