Analysis of active matrix GaN-based HFET switch circuits integrated with GaN LED micro-displays

Shih, G.A.G.A.ShihJIAN-JANG HUANG2020-06-112020-06-112005https://www.scopus.com/inward/record.uri?eid=2-s2.0-27744570224&doi=10.1109%2fLED.2005.857721&partnerID=40&md5=6828b708433d42c8af33554cba097b5eWe demonstrate a novel GaN-based heterojunction field effect transistor (HFET) active-matrix circuit for an light-emitting diode (LED) microdisplay. Simulation results are shown with basic and improved circuits. Variations of process and material growth conditions are discussed by correlating device parameters with LED flow currents in this circuit. It shows that the HFET-LED control circuit approach provides a stability path to mitigate variations of LED currents during operations. © 2005 IEEE.GaN; Heterojunction field effect transistor (HFET); Light-emitting diode (LED); MicrodisplaysComputer simulation; Display devices; Gallium nitride; Heterojunctions; Integrated circuits; Leakage currents; Light emitting diodes; Semiconductor device models; Semiconductor growth; Semiconductor switches; Heterojunction field effect transistor (HFET); Microdisplays; Field effect transistorsAnalysis of active matrix GaN-based HFET switch circuits integrated with GaN LED micro-displaysjournal article10.1109/LED.2005.8577212-s2.0-27744570224