C.-H. YuM.-L. FanK.-C. YuPin SuC.-T. ChuangVITA PI-HO HU2020-10-072020-10-07201600189383https://scholars.lib.ntu.edu.tw/handle/123456789/516588https://www.scopus.com/inward/record.uri?eid=2-s2.0-84958125898&doi=10.1109%2fTED.2015.2505064&partnerID=40&md5=efd41d4c1936c5f17e20eef9426cdabaFor the first time, we comprehensively evaluate 6T SRAM stability and performance using monolayer and bilayer transition metal dichalcogenide (TMD) devices based on the ITRS 2028 (5.9 nm) node. Our study indicates that, with excellent device electrostatics and superior stability, the monolayer TMD is favored for low-power SRAM applications, while the bilayer TMD, with higher carrier mobility, is more suitable for relaxed channel length and high-performance SRAM applications. © 2015 IEEE.2-D materials; Bilayer; Monolayer; SRAM cell; Transition metal dichalcogenide (TMD)Electric current regulators; Monolayers; Static random access storage; 6T-SRAM; Bi-layer; Channel length; Low-power SRAM; SRAM applications; Transition metal dichalcogenides; Transition metalsEvaluation of Monolayer and Bilayer 2-D Transition Metal Dichalcogenide Devices for SRAM Applicationsjournal article10.1109/ted.2015.25050642-s2.0-84958125898