Lee, Chang ChengChang ChengLeeHuang, Chun WeiChun WeiHuangLiao, Po HsiangPo HsiangLiaoHuang, Yu HsinYu HsinHuangHuang, Ching LiangChing LiangHuangLin, Kuan HengKuan HengLinCHUNG-CHIH WU2023-07-182023-07-182023-01-012072-666Xhttps://scholars.lib.ntu.edu.tw/handle/123456789/633907Micro-light-emitting diodes (micro-LEDs) have been regarded as the important next-generation display technology, and a comprehensive and reliable modeling method for the design and optimization of characteristics of the micro-LED is of great use. In this work, by integrating the electrical simulation with the optical simulation, we conduct comprehensive simulation studies on electrical and optical/emission properties of real InGaN-based flip-chip micro-LED devices. The integrated simulation adopting the output of the electrical simulation (e.g., the non-uniform spontaneous emission distribution) as the input of the optical simulation (e.g., the emission source distribution) can provide more comprehensive and detailed characteristics and mechanisms of the micro-LED operation than the simulation by simply assuming a simple uniform emission source distribution. The simulated electrical and emission properties of the micro-LED were well corroborated by the measured properties, validating the effectiveness of the simulation. The reliable and practical modeling/simulation methodology reported here shall be useful to thoroughly investigate the physical mechanisms and operation of micro-LED devices.enefficiency | electrical modeling | flip-chip micro-LED | light extraction | optical modelingjournal article10.3390/mi14010009366770702-s2.0-85146540746https://api.elsevier.com/content/abstract/scopus_id/85146540746