Carrier trapping effects on photoluminescence decay time in InGaN/GaN quantum wells with nanocluster structures

Lu, Yen-ChengYen-ChengLuCheng, Yung-ChenYung-ChenChengChen, Cheng-YenCheng-YenChenWang, Hsiang-ChenHsiang-ChenWangYang, C. C.C. C.Yang2010-09-272018-07-052010-09-272018-07-052007-03http://ntur.lib.ntu.edu.tw//handle/246246/205517en-USCarrier trapping effects on photoluminescence decay time in InGaN/GaN quantum wells with nanocluster structuresjournal article