Cryogenic operation of a high speed 850 nm VCSEL with 40.1 GHz modulation bandwidth at 223 K

Cheng H.-TWu C.-HFu WWang H.-LFeng MCHAO-HSIN WU2021-09-022021-09-022020https://www.scopus.com/inward/record.uri?eid=2-s2.0-85098710165&doi=10.1109%2fOECC48412.2020.9273549&partnerID=40&md5=6456d00cb814483695e6a91b0dcc48ffhttps://scholars.lib.ntu.edu.tw/handle/123456789/580564Efficient and reliable interconnect could be achieved with cryogenic VCSELs. In this work, our home-made 850 nm VCSEL is characterized from 298 K to 223 K. At 223 K, our device exhibits an output power of 6 mW, and achieves a record -3dB bandwidth of 40.1 GHz. The higher laser output power and extended bandwidth of the VCSEL attributes to the reduced junction temperature of 62°C at 223 K. ? 2020 IEEE.Bandwidth; Cryogenics; Cryogenic operations; High Speed; Junction temperatures; Laser output power; Modulation bandwidth; Output power; Surface emitting lasers[SDGs]SDG7Cryogenic operation of a high speed 850 nm VCSEL with 40.1 GHz modulation bandwidth at 223 Kconference paper10.1109/OECC48412.2020.92735492-s2.0-85098710165