In0.18Al0.82N/AlN/GaN MIS-HEMT on Si with Schottky-drain contact

Lee, M.HM.HLeeTang, M.M.TangChen, P.-G.P.-G.ChenMING-HAN LIAO2020-01-132020-01-132017https://www.scopus.com/record/display.uri?eid=2-s2.0-85007199265&origin=resultslist&sort=plf-f&cite=2-s2.0-85007199265&src=s&imp=t&sid=d99d8757ff6572f8ff403421c5a8cd80&sot=cite&sdt=a&sl=0[SDGs]SDG7In0.18Al0.82N/AlN/GaN MIS-HEMT on Si with Schottky-drain contactletter10.1016/j.sse.2016.11.0022-s2.0-85007199265