Triangular-channel Ge NFETs on Si with (111) sidewall-enhanced I <inf>on</inf> and nearly defect-free channels

CHEE-WEE LIU2018-09-102018-09-102012http://www.scopus.com/inward/record.url?eid=2-s2.0-84876144759&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/372775Triangular-channel Ge NFETs on Si with (111) sidewall-enhanced I <inf>on</inf> and nearly defect-free channelsconference paper10.1109/IEDM.2012.6479090