Lin S.-H.Lu C.-H.2019-05-132019-05-13201409574522https://scholars.lib.ntu.edu.tw/handle/123456789/407375Zinc indium selenide (ZnIn2Se4) films were successfully prepared via a spin coating process followed by a selenization treatment. The single-phased ZnIn2Se4 derived from spin coated precursors was synthesized on selenization at 450 ¢XC for 0.5 h. The crystal structure was confirmed to be a defective chalcopyrite structure. Optical absorption spectra revealed that the value of a band gap of ZnIn 2Se4 was equal to 1.83 eV. Via the spin coating route with a sequential selenization process, films with a densified microstructure were obtained. Additionally, raising the selenization temperatures significantly increased the crystallinity and n-type conductivity of the prepared films. Conversion efficiency of the Cu(In,Ga)Se2 solar device using the spin-coated ZnIn2Se4 films reached 3.52 %. Moreover, the series resistance and shunt conductance of the fabricated solar cells were decreased, owing to an improved p-n quality and reduced defects of the prepared ZnIn2Se4 layers. Results of this study demonstrate that the spin coating process was is an effective approach to prepare the n-type ZnIn2Se4 layers used in Cu(In,Ga)Se2 solar cells. ? 2014 Springer Science+Business Media New York.[SDGs]SDG7journal article10.1007/s10854-014-2065-12-s2.0-84904258375https://www.scopus.com/inward/record.uri?eid=2-s2.0-84904258375&doi=10.1007%2fs10854-014-2065-1&partnerID=40&md5=4c045c7d60306c2f683c185bb5f52175