High efficient 820 nm MOS Ge quantum dot photodetectors for short-reach integrated optical receivers with 1300 and 1550 nm sensitivity

Dept. of Electr. Eng., National Taiwan Univ.Hsu, B.C.B.C.HsuChang, S.T.S.T.ChangShie, C.R.C.R.ShieLai, C.C.C.C.LaiChen, P.S.P.S.ChenLiu, C.W.C.W.Liu2007-04-192018-07-062007-04-192018-07-062002-12http://ntur.lib.ntu.edu.tw//handle/246246/2007041910021052application/pdf392646 bytesapplication/pdfen-USHigh efficient 820 nm MOS Ge quantum dot photodetectors for short-reach integrated optical receivers with 1300 and 1550 nm sensitivityjournal article10.1109/IEDM.2002.1175786http://ntur.lib.ntu.edu.tw/bitstream/246246/2007041910021052/1/01175786.pdf