Wan H.-WHong Y.-JCheng Y.-TCHIA-KUEN CHENGHsu C.-HWu C.-TPi T.-WKwo JMINGHWEI HONG2022-12-142022-12-14202126376113https://www.scopus.com/inward/record.uri?eid=2-s2.0-85106643011&doi=10.1021%2facsaelm.0c01134&partnerID=40&md5=91203d7bfab05f190180ef1f3a72030dhttps://scholars.lib.ntu.edu.tw/handle/123456789/626101Single-crystal silicon (Si) of six monolayer thickness was epitaxially grown on epi-germanium (Ge) in the (001) orientation at substrate temperatures lower than 300 °C, followed by direct deposition of hafnium oxide (HfO2) and aluminum oxide (Al2O3) under ultra-high vacuum. We monitored and studied the Si growth and its epitaxy with the epi-Ge substrate using in-situ reflection high-energy electron diffraction and high-resolution synchrotron radiation X-ray diffraction. Using the gate stacks, we obtained interfacial trap densities of (1-3) × 1011 eV-1 cm-2 without the use of high-pressure hydrogen annealing and a highly reliable Ge p-type metal-oxide semiconductor with a high acceleration factor of 11. ©capacitance-voltage hysteresis; germanium; high-resolution X-ray diffraction; high-κ dielectrics; low-temperature; MOS devices; reliability; synchrotron radiation; ultra-thin epitaxial single-crystal siliconAlumina; Aluminum coatings; Aluminum oxide; Crystal orientation; Deposition; Germanium metallography; Hafnium oxides; Metals; MOS devices; Oxide semiconductors; Reflection high energy electron diffraction; Semiconducting germanium; Silicon wafers; Single crystals; Substrates; Synchrotron radiation; Temperature; High pressure hydrogen; Interfacial trap densities; Low-temperature grown; Metal oxide semiconductor; Monolayer thickness; Single crystal silicon; Substrate temperature; Synchrotron radiation x-ray diffractions; Germanium compoundsjournal article10.1021/acsaelm.0c011342-s2.0-85106643011