Chao-Jui HsuChing-Hsiang ChangKuei-Ming ChangCHUNG-CHIH WU2019-10-242019-10-242017214922https://scholars.lib.ntu.edu.tw/handle/123456789/427874https://www.scopus.com/inward/record.uri?eid=2-s2.0-85007499690&doi=10.7567%2fJJAP.56.010301&partnerID=40&md5=78be0bb26bef4800f43f11c2684e48fcWe investigated the deposition of high-performance organic-inorganic hybrid dielectric films by low-Temperature (close to room temperature) inductively coupled plasma chemical vapor deposition (ICP-CVD) with hexamethyldisiloxane (HMDSO)/O2 precursor gas. The hybrid films exhibited low leakage currents and high breakdown fields, suitable for thin-film transistor (TFT) applications. They were successfully integrated into the gate insulator, the etch-stop layer, and the passivation layer for bottom-gate staggered amorphous In-Ga-Zn-O (a-IGZO) TFTs having the etch-stop configuration. With the double-Active-layer configuration having a buffer a-IGZO back-channel layer grown in oxygen-rich atmosphere for better immunity against plasma damage, the etch-stop-Type bottom-gate staggered a-IGZO TFTs with good TFT characteristics were successfully demonstrated. The TFTs showed good field-effect mobility (μFE), threshold voltage (Vth), subthreshold swing (SS), and on/off ratio (Ion/off) of 7.5cm2V-1 s-1, 2.38 V, 0.38V/decade, and 2.2 ' 108, respectively, manifesting their usefulness for a-IGZO TFTs. © 2017 The Japan Society of Applied Physics.Amorphous films; Amorphous semiconductors; Chemical vapor deposition; Deposition; Dielectric films; Indium; Inductively coupled plasma; Leakage currents; Oxide films; Plasma CVD; Plasma enhanced chemical vapor deposition; Semiconducting indium compounds; Semiconducting organic compounds; Temperature; Thin film circuits; Thin films; Threshold voltage; Vapor deposition; Zinc; Amorphous-indium gallium zinc oxides; Amorphousingazno (a-igzo); Field-effect mobilities; Inductively coupled plasma chemical vapor deposition; Organic-inorganic hybrid; Organic-inorganic hybrid films; Oxygen-rich atmospheres; Sub-threshold swing(ss); Thin film transistorsjournal article10.7567/jjap.56.0103012-s2.0-85007499690