Chen, Hsuen-LiHsuen-LiChenWang, Lon A.Lon A.Wang2008-12-312018-06-282008-12-312018-06-2819991559128Xhttp://ntur.lib.ntu.edu.tw//handle/246246/95607https://www.scopus.com/inward/record.uri?eid=2-s2.0-0032606739&doi=10.1364%2fAO.38.004885&partnerID=40&md5=440bd951abc8d9965a7e790cdd76917cWe demonstrate a new bottom antireflective coating (BARC) layer for ArF excimer laser lithography. The antireflective layer is composed of hexamethyldisiloxane (HMDSO) film, which is deposited by the conventional electron cyclotron resonance-plasma-enhanced chemical-vapor deposition process. We obtain the appropriate HMDSO films for BARC layers by varying the gas-flow rate ratio of oxygen to HMDSO. Such a process has several advantages: high deposition rate, low process temperature, easy film removal, and reduced cost. Measured reflectances of less than 0.5% on both Al-Si and silicon crystal substrates have been achieved and agree well with the simulated reflectances. The swing effect is shown to be significantly reduced by addition of the HMDSO-based BARC layer. © 1999 Optical Society of America.application/pdf110338 bytesapplication/pdfen-USElectron cyclotron resonance; Excimer lasers; Light extinction; Light transmission; Photolithography; Plasma enhanced chemical vapor deposition; Refractive index; Silicon compounds; Bottom antireflective coatings (BARC); Hexamethyldisiloxane; Antireflection coatingsHexamethyldisiloxane Film as the Bottom Antireflective Coating Layer for ArF Excimer Laser Lithographyjournal article2-s2.0-0032606739WOS:000081902000019http://ntur.lib.ntu.edu.tw/bitstream/246246/95607/1/07.pdf