Shallow Trench Isolated-Related Narrow Channel Effect on Kink Effect and Breakdown Behavior of 40nm PD SOI NMOS Device

J. I. LuH. J. HungJ. B. KuoD. ChenC. S. YehC. T. TsaiJAMES-B KUO2018-09-102018-09-102009-01http://scholars.lib.ntu.edu.tw/handle/123456789/351953Shallow Trench Isolated-Related Narrow Channel Effect on Kink Effect and Breakdown Behavior of 40nm PD SOI NMOS Deviceconference paper