C.J.ChouJENN-GWO HWU2019-10-312019-10-31201719385862https://www.scopus.com/inward/record.uri?eid=2-s2.0-85021786275&doi=10.1149%2f07705.0099ecst&partnerID=40&md5=9676fa0734490928f912c1b91d5d8519In order to reduce the interference caused by fringing field, a cost-effective method to form passivation layer on the edge side of aluminum gate was demonstrated. In capacitance-voltage (C-V) characteristics, it is found that the initiation point of deep depletion is at a smaller VG, the sensitivity to light is less evident, and the value of capacitance is more area-dependent. All of these significant different observations are indications of the rearrangement of fringing field. Furthermore, TCAD simulations were employed to support the observed phenomenon. © The Electrochemical Society.[SDGs]SDG11Cost effectiveness; Integrated circuits; Passivation; Aluminum-gate; Capacitance-voltage characteristics; Cost-effective methods; Deep depletion; Fringing fields; Metal gate; Passivation layer; TCAD simulation; Capacitancejournal article10.1149/07705.0099ecst2-s2.0-85021786275