Huang, Li-AnLi-AnHuangWu, Jau YangJau YangWuWu, Yuh-RennYuh-RennWu2025-12-172025-12-172025-09-14[9798331521530]21583234https://www.scopus.com/record/display.uri?eid=2-s2.0-105022083454&origin=resultslisthttps://scholars.lib.ntu.edu.tw/handle/123456789/734695Two impact ionization models are examined within our custom TCAD framework to analyze the intensity and spatial distribution of impact ionization in the SPAD under different bias voltages and compare the breakdown voltage to the experimental results. The goal is to reduce the noise levels and improve the efficiency for quantum key distribution applications.falseImpact IonizationSPADTCADconference paper10.1109/nusod64393.2025.111997312-s2.0-105022083454