SiC vs. Si: two-dimensional analysis of quasi-saturation behavior of DMOS devices operating at elevated temperatures

Dept. of Electr. Eng., National Taiwan Univ.Chang, Y.W.Y.W.ChangKuo, J.B.J.B.Kuo2007-04-192018-07-062007-04-192018-07-061995-10http://ntur.lib.ntu.edu.tw//handle/246246/2007041910032074application/pdf193494 bytesapplication/pdfen-USSiC vs. Si: two-dimensional analysis of quasi-saturation behavior of DMOS devices operating at elevated temperaturesjournal article10.1109/ICSICT.1995.500092http://ntur.lib.ntu.edu.tw/bitstream/246246/2007041910032074/1/00500092.pdf