MIIN-JANG CHENCHING-FUH LINLee, M. H.M. H.LeeChang, S. T.S. T.ChangCHEE-WEE LIU2009-03-182018-07-062009-03-182018-07-06200100036951http://ntur.lib.ntu.edu.tw//handle/246246/145923https://www.scopus.com/inward/record.uri?eid=2-s2.0-0035475479&doi=10.1063%2f1.1405429&partnerID=40&md5=3bddbdb9e34a03bb85784b7f4f336542The temporal response of the electroluminescence at the Si band gap energy from a metal-oxide-silicon (MOS) tunneling diode is used to characterize the minority carrier lifetime near the Si/SiO2 interface. The temporal responses reveal that the Shockley-Read-Hall (SRH) recombination lifetimes are 18 and 25.8 μs for the rising and falling edges, respectively, and that the ratio for SRH, radiative, and Auger recombinations is 1:0.196:0.096 at injection current density of 39 A/cm2. The investigation shows that the electroluminescence of the MOS tunneling diode can be significantly increased by reducing the number of the nonradiative recombination centers. © 2001 American Institute of Physics.application/pdf50693 bytesapplication/pdfen-US[SDGs]SDG7journal article10.1063/1.14054292-s2.0-0035475479http://ntur.lib.ntu.edu.tw/bitstream/246246/145923/1/31.pdf